This article explains the switching behavior of power MOSFETs in practical application circuits and shows the reader/designer how to choose the right device for the application using the ...
SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...
Compared to traditional silicon, power MOSFETs based on silicon carbide (SiC) can handle higher voltages with lower on-resistance (R DS(on)) and superior thermal conductivity, opening the door to ...
Gallium nitride (GaN) is winning over the world of power electronics with its faster switching speeds and higher efficiency over that of silicon MOSFETs, which have dominated for decades. But nothing ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits (ICs) for energy-efficient power conversion, today announced the addition of two ...
Nick Perosino, New Product Development Manager at Central Semiconductor (an AEM Company), recently presented a webinar on ...
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